Category Archives: Discrete Semiconductors
Fairchild BF256B JFET Transistor 3 Pin RF FET TO92
BD135-10 TO126 45V NPN GP Transistor
BD136 TO126 45V PNP Transistor Trusemi
High Power PNP Transistors – TruSemi BD136, High power transistor, PNP polarity, 45V collector emitter breakdown voltage, 45V collector base breakdown voltage, 1.5A collector current, 12.5W power, 250 DC current gain, TO-126 case, suitable for medium power linear and switching applications. BD136 TO126 45V PNP Transistor Trusemi » Check Price Now!
Bd437 TO126 Power Switch Transistor Trusemi
High Power NPN Transistors – ST BD437, High power transistor, NPN polarity, 45V collector emitter breakdown voltage, 45V collector base breakdown voltage, 4A collector current, 36W power, 140 DC current gain, 3MHz transition frequency, TO-126 case, suitable for medium power linear and switching applications. Bd437 TO126 Power Switch Transistor Trusemi » Check Price Now!
TruSemi BD438 TO126 PNP Power Switch Transistor
High Power PNP Transistors – TruSemi BD438, High power transistor, PNP polarity, 45V collector emitter breakdown voltage, 45V collector base breakdown voltage, 4A collector current, 36W power, 85 DC current gain, 3MHz transition frequency, TO-126 case, suitable for medium power linear and switching applications. TruSemi BD438 TO126 PNP Power Switch Transistor » Check Price Now!
BD680 Dar PNP 80V 4A To126 St RC Trusemi
Darlington PNP Transistors – TruSemi BD680, Darlington power transistor, PNP polarity, 80V collector emitter voltage (vceo), 80V Collector-Base voltage (vcbo), 5V Emitter-Base voltage (veb), 4A collector current, 40W power, 750 DC current gain (hfe), 0.5mA collector cut-off current, 2.5V Collector-Emitter saturation voltage, TO-126 case, tube, complementary, good hfe linearity, high transition frequency, monolithic Darlington configuration
BDW94C TO220 Darlington PNP 100V 12A Trusemi
Darlington PNP Transistors – TruSemi BDW94C, Darlington power transistor, PNP polarity, 100V collector emitter voltage (vceo), 100V Collector-Base voltage (vcbo), 5V Emitter-Base voltage (veb), 12A collector current, 80W power, 750 DC current gain (hfe), 100uA collector cut-off current, 3V Collector-Emitter saturation voltage, TO-220 case, each, 1, complementary, silicon epitaxial-base, monolithic configuration, integrated anti-parallel collector-emitter diode,
Tip125 TO220 Darlington PNP 60V 5A Trusemi
Darlington PNP Transistors – TruSemi TIP125, Darlington transistor, PNP polarity, 60V collector emitter voltage (vceo), 60V Collector-Base voltage (vcbo), 5V Emitter-Base voltage (veb), 5A collector current, 65W power, 1000 DC current gain (hfe), 0.5mA collector cut-off current, 4V Collector-Emitter saturation voltage, TO-220AB case, each, 1, designed for use in general purpose amplifier and low-speed switching
Trusemi TIP31A TO220 Transistor NPN 60V
High Power NPN Transistors – TruSemi TIP31, Power transistor, NPN polarity, 40V collector emitter breakdown voltage, 40V collector base breakdown voltage, 2A collector current, 2W power, 25 DC current gain, 3MHz transition frequency, TO-220 case, 1.98g weight, suitable for a wide variety of switching and amplifier applications, series and shunt regulators, driver and output stages
ST TIP32C TO220 100V PNP High Voltage Transistor
High Power PNP Transistors – ST TIP32C, High power transistor, PNP polarity, 100V collector emitter breakdown voltage, 100V collector base breakdown voltage, 3A collector current, 2W power, 25 DC current gain, 3MHz transition frequency, TO-220 case, epitaxial planar construction, designed for use in general purpose amplifier and switching applications. ST TIP32C TO220 100V PNP High
TIP41C TO220 100V NPN Transistor
High Power NPN Transistors – ST TIP41C, Power transistor, NPN polarity, 40V collector emitter breakdown voltage, 40V collector base breakdown voltage, 6A collector current, 65W power, 75 DC current gain, 3MHz transition frequency, TO-220 case, suitable for use in general purpose amplifier and switching applications. TIP41C TO220 100V NPN Transistor » Check Price Now!
TruSemi 2N7002 MOSFET SOT23
Trusemi BD135 TO126 Transistor NPN 45V
High Power NPN Transistors – TruSemi BD135, High power transistor, NPN polarity, 45V collector emitter breakdown voltage, 45V collector base breakdown voltage, 1.5A collector current, 12.5W power, 250 DC current gain, TO-126 case, suitable for medium power linear and switching applications. Trusemi BD135 TO126 Transistor NPN 45V » Check Price Now!
Bd911 Transistor
High Power NPN Transistors – ST BD911, Power transistor, NPN polarity, 100V collector emitter breakdown voltage, 100V collector base breakdown voltage, 15A collector current, 90W power, 250 DC current gain, 3MHz transition frequency, TO-220 case, silicon epitaxial-base, suitable for use in power linear and switching applications. Bd911 Transistor » Check Price Now!
BD912 Transistor
High Power PNP Transistors – ST BD912, Power transistor, PNP polarity, 100V collector emitter breakdown voltage, 100V collector base breakdown voltage, 15A collector current, 90W power, 250 DC current gain, 3MHz transition frequency, TO-220 case, silicon epitaxial base, suitable for use in power linear and switching applications. BD912 Transistor » Check Price Now!
TruSemi BC548B Transistor TO92 30V NPN
TruSemi BC547B Transistor NPN TO92 45V
TBC547B Transistor NPN TO92 50V CDIL
TruSemi BC327-16 Transistor PNP TO92 45V
TruSemi BC337-16 Transistor NPN TO92 50V
TruSemi BC557B Transistor PNP TO92 45V
TruSemi BC807-25 Reel 3K Transistor SOT23
SOT-23 General Purpose PNP Transistors – TruSemi BC807-25, General purpose transistor, PNP polarity, 45V collector emitter breakdown voltage, 500mA collector current, 225mW power, 630 DC current gain, 100MHz transition frequency, SOT-23 case, epitaxial planar construction, designed for use in drive and output stages of audio amplifiers, supplied in reel of 3000. TruSemi BC807-25 Reel 3K
TruSemi 81-0476 BC807-25 Transistor PNP SOT-23
Diotec BC337-16 TO92 45V NPN Gp Trans
TruSemi BC817-25 Transistor NPN SOT23
Diotec BC337-25 TO92 (2.54 Pitch) 45V NPN Transistor
TruSemi 2N3904 Transistor NPN TO92 60V
Fairchild Semiconductor BD678 Dar PNP 100V 4A SOT32 ST
Darlington PNP Transistors – Fairchild Semiconductor BD678, Darlington power transistor, PNP polarity, 60V collector emitter voltage (vceo), 60V Collector-Base voltage (vcbo), 5V Emitter-Base voltage (veb), 4A collector current, 40W power, 750 DC current gain (hfe), 0.5mA collector cut-off current, 2.5V Collector-Emitter saturation voltage, TO-126 case, tube, complementary, good hfe linearity, high transition frequency, monolithic Darlington
TruSemi 2N4401 Transistor NPN TO92 40V
Fairchild Semiconductor BDX33C Dar NPN 100V 10A TO220 ST
Darlington NPN Transistors – Fairchild Semiconductor BDX33C, Darlington transistor, NPN polarity, 100V collector emitter voltage (vceo), 100V Collector-Base voltage (vcbo), 2.5V Emitter-Base voltage (veb), 10A collector current, 70W power, 750 DC current gain (hfe), 5mA collector cut-off current, 2.5V Collector-Emitter saturation voltage, TO-220 case, each, 1, complementary silicon, epitaxial-base, monolithic configuration, typical applications includes linear